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| Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD1991A I Features * High forward current transfer ratio hFE * Allowing supply with the radial taping 6.90.1 0.15 0.7 4.0 1.05 2.50.1 (1.45) 0.05 0.8 0.65 max. 1.0 0.45-0.05 +0.1 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -60 -50 -7 -200 -100 400 150 -55 to +150 Unit V V V mA mA mW C C 1 2 3 0.45-0.05 2.50.5 2.50.5 +0.1 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package 1.20.1 0.65 max. 0.45+ 0.1 - 0.05 2.50.1 (HW Type) I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460 VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = -20 V, IE = 0 VCE = -20 V, IB = 0 IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCE = -10 V, IC = -2 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 80 3.5 -60 -50 -7 160 460 -1 V MHz pF Min Typ Max -1 -1 Unit A A V V V Product of no-rank is not classified and have no indication for rank. 14.50.5 0.85 3.50.1 0.8 1 2SB1320A PC Ta 500 -120 Transistors IC VCE Ta = 25C -60 VCE = -5 V Ta = 25C -50 IC I B Collector power dissipation PC (mW) 400 -100 Collector current IC (mA) Collector current IC (mA) -80 IB = -300 A -60 -250 A -200 A -40 -150 A -100 A -50 A -40 300 -30 200 -20 100 -20 -10 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 -100 -200 -300 -400 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB VBE -400 -350 -300 -250 -200 -150 -100 -50 0 - 0.4 - 0.8 -1.2 -1.6 VCE = -5 V Ta = 25C -240 IC VBE Collector to emitter saturation voltage VCE(sat) (V) VCE = -5 V VCE(sat) IC -10 -3 -1 Ta = 75C 25C -25C IC / IB = 10 -200 Collector current IC (mA) Base current IB (A) -160 Ta = 75C 25C -25C - 0.3 - 0.1 -120 -80 - 0.03 - 0.01 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1 000 -40 0 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE IC 600 VCE = -5 V 160 140 VCB = -10 V Ta = 25C fT I E 8 Cob VCB Collector output capacitance Cob (pF) 7 6 5 4 3 2 1 0 -1 IE = 0 f = 1 MHz Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 120 100 80 60 40 20 400 Ta = 75C 25C -25C 300 200 100 0 -1 -3 -10 -30 -100 -300 -1 000 0 0.1 0.3 1 3 10 30 100 -2 -3 -5 -10 -20-30 -50 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistors Cre VCE Common emitter reverse transfer capacitance Cre (pF) 6 IE = 1 mA f = 10.7 MHz Ta = 25C 2SB1320A NF IE 6 VCB = -5 V f = 1 kHz Rg = 2 k Ta = 25C 20 18 16 VCB = -5 V Rg = 50 k Ta = 25C NF IE 5 5 Noise figure NF (dB) Noise figure NF (dB) 4 4 14 12 10 8 6 4 2 10 kHz f = 100 Hz 1 kHz 3 3 2 2 1 1 0 0 -5 -10 -15 -20 -25 -30 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.1 - 0.2- 0.3 - 0.5 -1 -2 -3 -5 -10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) h Parameter IE 300 VCB = -5 V f = 270 Hz 200 Ta = 25C hfe 100 50 100 50 hoe (S) 300 200 h Parameter VCB IE = -2 mA f = 270 Hz Ta = 25C 100 VCB = -10 V ICBO Ta hfe 50 30 ICBO (Ta) ICBO (Ta = 25C) h Parameter 30 20 10 5 3 2 h Parameter 20 30 20 hoe (S) 10 5 3 2 hre (x10-4) hie (k) 10 5 3 2 hie (k) hre (x10-4) 1 - 0.1 - 0.2- 0.3- 0.5 -1 -2 -3 -5 -10 1 -1 -2 -3 -5 -10 -20-30 -50 -100 1 0 25 50 75 100 125 150 Emitter current IE (mA) Collector to vase voltage VCB (V) Ambient temperature Ta (C) 3 |
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